| PART |
Description |
Maker |
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| AS179-000 |
GaAs SPDT Switch 300 kHz-3 GHz Medium Power
PHEMT GaAs IC High Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
| AS219-321 |
AS219-321:PHEMT GaAs IC High Linearity 3 V T/R SP3|DC-6 GHz Plastic Packaged and Chip|SPST AS219 - 321：PHEMT的砷化镓集成电路高线3室SP3的|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Alpha Industries, Inc.
|
| FPD750SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| FPD3000SOT89E-BA FPD3000SOT89E-BB FPD3000SOT89E-BC |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| EB750DFN-BA EB750DFN-BB EB750DFN-BC EB750DFN-BE FP |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| FPD6836SOT343 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| EB1500DFN-BA EB1500DFN-BB EB1500DFN-BC EB1500DFN-B |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD1050SOT89 FPD1050SOT89E |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| FPD1500SOT89CE FPD1500SOT89 EB1500SOT89E-BG EB1500 |
Si, N-CHANNEL, RF POWER, HEMFET
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
RF MICRO DEVICES INC
Filtronic Compound Semiconductors
|
